63-7019-96 IRF135S203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin D2PAK Infineon IRF135S203
Features
- StrongIRFET Power MOSFET, Infineon
- The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 129 A
- Maximum Drain Source Voltage : 135 V
- Maximum Drain Source Resistance : 8.4 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 441 W
- Width : 4.83mm
- CODE No.:130-0937
| Order No. | 63-7019-96 | |
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| Model No. | IRF135S203 | |
| Standard price |
JPY: 1,810
USD: 11.26
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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