63-7019-95 ［Discontinued］IRF135B203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin TO-220AB Infineon IRF135B203
Features
- StrongIRFET Power MOSFET, Infineon
- The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 129 A
- Maximum Drain Source Voltage : 135 V
- Maximum Drain Source Resistance : 8.4 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 441 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0936
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63-7019-95 ［Discontinued］IRF135B203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin TO-220AB Infineon IRF135B203特徴
仕様
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