63-7019-94 [Discontinued]IRF100B202 N-Channel MOSFET, 97 A, 100 V HEXFET, 3 + Tab-Pin TO-220 Infineon IRF100B202
Features
- StrongIRFET Power MOSFET, Infineon
- The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 97 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 8.6 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220
- Mounting Type : Through Hole
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 221 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0935
| Order No. | 63-7019-94 | |
|---|---|---|
| Model No. | IRF100B202 | |
| Standard price |
JPY: 960
USD: 5.97
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF100B202 N-Channel MOSFET, 97 A, 100 V HEXFET, 3 + Tab-Pin TO-220 Infineon IRF100B202](https://aimg.as-1.co.jp/c/63/7019/94/63701994.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)