63-7019-86 IPP055N03LGXKSA1 N-Channel MOSFET, 50 A, 30 V OptiMOS3, 3+Tab-Pin TO-220 Infineon IPP055N03LGXKSA1
Features
- Infineon OptiMOS3 Power MOSFET, up to 40 V
- OptiMOS products are packaged in a high-performance package for even the most challenging applications. This allows for maximum flexibility in limited space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the next generation of stringent voltage regulation standards for computing applications.
- JEDEC1-compliant N channel, logic level superior gate charge x R DS (on) product (FOM) ultra-low on-resistance R DS (on) lead-free plating for technologically targeted applications optimized for DC/DC converters for fast switching MOSFETs and SMPS
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 50 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 7.8 mΩ
- Maximum Gate Threshold Voltage : 2.2V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220
- Mounting Type : Through Hole
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 68 W
- Maximum Operating Temperature : +175 °C
- CODE No.:130-0923
| Order No. | 63-7019-86 | |
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| Model No. | IPP055N03LGXKSA1 | |
| Standard price |
JPY: 1,220
USD: 7.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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