63-7019-84 [Discontinued]IPN65R1K5CEATMA1 N-Channel MOSFET, 5.2 A, 700 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN65R1K5CEATMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 5.2 A
- Maximum Drain Source Voltage : 700 V
- Maximum Drain Source Resistance : 1.5 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 5 W
- Height : 1.7mm
- CODE No.:130-0921
| Order No. | 63-7019-84 | |
|---|---|---|
| Model No. | IPN65R1K5CEATMA1 | |
| Standard price |
JPY: 1,540
USD: 9.58
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPN65R1K5CEATMA1 N-Channel MOSFET, 5.2 A, 700 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN65R1K5CEATMA1](https://aimg.as-1.co.jp/c/63/7019/84/63701984.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)