63-7019-83 ［Discontinued］IPN60R3K4CEATMA1 N-Channel MOSFET, 2.6 A, 650 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN60R3K4CEATMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 2.6 A
- Maximum Drain Source Voltage : 650 V
- Maximum Drain Source Resistance : 3.4 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 5 W
- Typical Turn-On Delay Time : 8 ns
- CODE No.:130-0920
| Order No. | 63-7019-83 | |
|---|---|---|
| Model No. | IPN60R3K4CEATMA1 | |
| Standard price |
JPY: 990
USD: 6.21
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
||
| Stock in Japan | - | |