Infineon

63-7019-83 [Discontinued]IPN60R3K4CEATMA1 N-Channel MOSFET, 2.6 A, 650 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN60R3K4CEATMA1

特徴

  • Infineon CoolMOS CE Power MOSFET

仕様

  • Quantity:1bag(25pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 2.6 A
  • Maximum Drain Source Voltage : 650 V
  • Maximum Drain Source Resistance : 3.4 Ω
  • Maximum Gate Threshold Voltage : 3.5V
  • Minimum Gate Threshold Voltage : 2.5V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Pin Count : 3 + Tab
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 5 W
  • Typical Turn-On Delay Time : 8 ns
  • CODE No.:130-0920
  •  
アズワン品番 63-7019-83
型番 IPN60R3K4CEATMA1
標準価格 JPY: 990 USD: 6.21
Excange rate 1USD= 159.53JPY
Valid price in Japan
入り数 1bag(25pieces)
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在庫数 -