63-7019-76 [Discontinued]IPN50R2K0CEATMA1 N-Channel MOSFET, 3.6 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon IPN50R2K0CEATMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 3.6 A
- Maximum Drain Source Voltage : 550 V
- Maximum Drain Source Resistance : 2 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 5 W
- Typical Input Capacitance @ Vds : 124 pF @ 100 V
- CODE No.:130-0912
| Order No. | 63-7019-76 | |
|---|---|---|
| Model No. | IPN50R2K0CEATMA1 | |
| Standard price |
JPY: 1,170
USD: 7.28
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPN50R2K0CEATMA1 N-Channel MOSFET, 3.6 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon IPN50R2K0CEATMA1](https://aimg.as-1.co.jp/c/63/7019/76/63701976.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)