63-7019-75 IPN50R1K4CEATMA1 N-Channel MOSFET, 4.8 A, 550 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN50R1K4CEATMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 4.8 A
- Maximum Drain Source Voltage : 550 V
- Maximum Drain Source Resistance : 1.4 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 5 W
- Typical Turn-Off Delay Time : 23 ns
- CODE No.:130-0911
| Order No. | 63-7019-75 | |
|---|---|---|
| Model No. | IPN50R1K4CEATMA1 | |
| Standard price |
JPY: 1,250
USD: 7.78
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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