63-7019-71 IPD80R1K4P7ATMA1 N-Channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1
Features
- Infineon CoolMOSP7 Power MOSFET
- The 800 V CoolMOSP7 power MOSFET family has established even higher efficiency and thermal characteristics. Suitable for applications such as power adapters, LED lighting, audio, industrial and auxiliary power supplies.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 4 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 1.4 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 32 W
- Typical Gate Charge @ Vgs : 10 nC @ 10 V
- CODE No.:130-0906
| Order No. | 63-7019-71 | |
|---|---|---|
| Model No. | IPD80R1K4P7ATMA1 | |
| Standard price |
JPY: 520
USD: 3.24
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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