63-7019-70 ［Discontinued］IPD65R650CEAUMA1 N-Channel MOSFET, 10.1 A, 700 V CoolMOS CE, 3-Pin DPAK Infineon IPD65R650CEAUMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 10.1 A
- Maximum Drain Source Voltage : 700 V
- Maximum Drain Source Resistance : 650 mΩ
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 86 W
- Number of Elements per Chip : 1
- CODE No.:130-0904
| Order No. | 63-7019-70 | |
|---|---|---|
| Model No. | IPD65R650CEAUMA1 | |
| Standard price |
JPY: 910
USD: 5.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |