63-7019-67 [Discontinued]IPD60R380P6ATMA1 N-Channel MOSFET, 10.6 A, 650 V CoolMOS P6, 3-Pin DPAK Infineon IPD60R380P6ATMA1
Features
- Infineon CoolMOS 6/P6 Series Power MOSFET
- Infineon's CoolMOSE6 and P6 series MOSFETs. These devices are highly efficient and can be used in a variety of applications, including power factor correction (PFC), lighting, consumer devices, as well as solar power, communications, and servers.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 10.6 A
- Maximum Drain Source Voltage : 650 V
- Maximum Drain Source Resistance : 380 mΩ
- Maximum Gate Threshold Voltage : 4.5V
- Minimum Gate Threshold Voltage : 3.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 83 W
- Dimensions : 6.73 x 6.22 x 2.41mm
- CODE No.:130-0899
| Order No. | 63-7019-67 | |
|---|---|---|
| Model No. | IPD60R380P6ATMA1 | |
| Standard price |
JPY: 910
USD: 5.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPD60R380P6ATMA1 N-Channel MOSFET, 10.6 A, 650 V CoolMOS P6, 3-Pin DPAK Infineon IPD60R380P6ATMA1](https://aimg.as-1.co.jp/c/63/7019/67/63701967.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)