63-7019-66 IPD60R1K0CEAUMA1 N-Channel MOSFET, 6.8 A, 650 V CoolMOS CE, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1
Features
- Infineon CoolMOS CE Power MOSFET
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 6.8 A
- Maximum Drain Source Voltage : 650 V
- Maximum Drain Source Resistance : 1 Ω
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 61 W
- Minimum Operating Temperature : -40 °C
- CODE No.:130-0898
| Order No. | 63-7019-66 | |
|---|---|---|
| Model No. | IPD60R1K0CEAUMA1 | |
| Standard price |
JPY: 3,100
USD: 19.29
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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