63-7019-64 IPB60R160P6ATMA1 N-Channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Features
- Infineon CoolMOS 6/P6 Series Power MOSFET
- Infineon's CoolMOSE6 and P6 series MOSFETs. These devices are highly efficient and can be used in a variety of applications, including power factor correction (PFC), lighting, consumer devices, as well as solar power, communications, and servers.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 23.8 A
- Maximum Drain Source Voltage : 650 V
- Maximum Drain Source Resistance : 160 mΩ
- Maximum Gate Threshold Voltage : 4.5V
- Minimum Gate Threshold Voltage : 3.5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 176 W
- Dimensions : 10.31 x 4.57 x 9.45mm
- CODE No.:130-0894
| Order No. | 63-7019-64 | |
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| Model No. | IPB60R160P6ATMA1 | |
| Standard price |
JPY: 1,380
USD: 8.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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