IXYS

63-6990-82 IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264 IXXK110N65B4H1

Features

  • IGBT discrete, IXYS

Spec

  • Quantity:1piece
  • Maximum Continuous Collector Current : 570 A
  • Maximum Collector Emitter Voltage : 650 V
  • Maximum Gate Emitter Voltage : ±20V
  • Maximum Power Dissipation : 880 W
  • Package Type : TO-264
  • Mounting Type : Through Hole
  • Channel Type : N
  • Pin Count : 3
  • Switching Speed : 10 → 30kHz
  • Transistor Configuration : Single
  • Length : 20.29mm
  • Width : 5.31mm
  • Height : 26.59mm
  • Dimensions : 20.29 x 5.31 x 26.59mm
  • Energy Rating : 3mJ
  • CODE No.:125-8051
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Order No. 63-6990-82
Model No. IXXK110N65B4H1
Standard price JPY: 5,380 USD: 33.47
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock