63-6990-82 IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264 IXXK110N65B4H1
Features
- IGBT discrete, IXYS
Spec
- Quantity:1piece
- Maximum Continuous Collector Current : 570 A
- Maximum Collector Emitter Voltage : 650 V
- Maximum Gate Emitter Voltage : ±20V
- Maximum Power Dissipation : 880 W
- Package Type : TO-264
- Mounting Type : Through Hole
- Channel Type : N
- Pin Count : 3
- Switching Speed : 10 → 30kHz
- Transistor Configuration : Single
- Length : 20.29mm
- Width : 5.31mm
- Height : 26.59mm
- Dimensions : 20.29 x 5.31 x 26.59mm
- Energy Rating : 3mJ
- CODE No.:125-8051
| Order No. | 63-6990-82 | |
|---|---|---|
| Model No. | IXXK110N65B4H1 | |
| Standard price |
JPY: 5,380
USD: 33.47
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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