63-6990-80 [Discontinued]IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD IXXH80N65B4H1
Features
- IGBT discrete, IXYS
Spec
- Quantity:1piece
- Maximum Continuous Collector Current : 430 A
- Maximum Collector Emitter Voltage : 650 V
- Maximum Gate Emitter Voltage : ±20V
- Maximum Power Dissipation : 625 W
- Package Type : TO-247AD
- Mounting Type : Through Hole
- Channel Type : N
- Pin Count : 3
- Switching Speed : 5 → 30kHz
- Transistor Configuration : Single
- Length : 16.13mm
- Width : 5.21mm
- Height : 21.34mm
- Dimensions : 16.13 x 5.21 x 21.34mm
- Maximum Operating Temperature : +175 °C
- CODE No.:125-8049
| Order No. | 63-6990-80 | |
|---|---|---|
| Model No. | IXXH80N65B4H1 | |
| Standard price |
JPY: 2,770
USD: 17.36
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD IXXH80N65B4H1](https://aimg.as-1.co.jp/c/63/6990/80/63699080.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)