63-6990-78 IXTH110N25T N-Channel MOSFET, 110 A, 250 V Trench, 3-Pin TO-247 IXYS IXTH110N25T
Features
- N Channel Trench Gate Power MOSFET, IXYS
- Trench Gate MOSFET Technology Low On Resistance (RDS (on)) Excellent Avalanche Durability
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 110 A
- Maximum Drain Source Voltage : 250 V
- Maximum Drain Source Resistance : 24 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-247
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 694 W
- Series : Trench
- CODE No.:125-8047
| Order No. | 63-6990-78 | |
|---|---|---|
| Model No. | IXTH110N25T | |
| Standard price |
JPY: 2,080
USD: 12.94
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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