63-6990-76 IXFN420N10T N-Channel MOSFET, 420 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227 IXYS IXFN420N10T
Features
- N-Channel Power MOSFET, IXYS HiperFET GigaMOS Series
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 420 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-227
- Mounting Type : Surface Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.07 kW
- Minimum Operating Temperature : -55 °C
- CODE No.:125-8043
| Order No. | 63-6990-76 | |
|---|---|---|
| Model No. | IXFN420N10T | |
| Standard price |
JPY: 6,820
USD: 42.75
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|