63-6990-75 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2
Features
- N-Channel Power MOSFET, IXYS HiperFET GigaMOS Series
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 310 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 4 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-227
- Mounting Type : Surface Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.07 kW
- Number of Elements per Chip : 1
- CODE No.:125-8042
| Order No. | 63-6990-75 | |
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| Model No. | IXFN360N15T2 | |
| Standard price |
JPY: 10,400
USD: 64.71
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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