63-6990-74 IXFN360N10T N-Channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227 IXYS IXFN360N10T
Features
- N-Channel Power MOSFET, IXYS HiperFET GigaMOS Series
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 360 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 2.6 mΩ
- Maximum Gate Threshold Voltage : 4.5V
- Minimum Gate Threshold Voltage : 2.5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-227
- Mounting Type : Surface Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 830 W
- Typical Gate Charge @ Vgs : 525 nC @ 10 V
- CODE No.:125-8041
| Order No. | 63-6990-74 | |
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| Model No. | IXFN360N10T | |
| Standard price |
JPY: 5,070
USD: 31.80
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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