63-5180-55 IXFN80N50P N-Channel MOSFET, 66 A, 500 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN80N50P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity：1set(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 66 A
- Maximum Drain Source Voltage : 500 V
- Maximum Drain Source Resistance : 65 mΩ
- Maximum Gate Threshold Voltage : 5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-227B
- Mounting Type : Panel Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 700 W
- Number of Elements per Chip : 1
- CODE No.:920-0745
| Order No. | 63-5180-55 | |
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| Model No. | IXFN80N50P | |
| Standard price |
JPY: 73,600
USD: 461.36
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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