63-5173-14 IPT020N10N3ATMA1 N-Channel MOSFET, 300 A, 100 V OptiMOS 3, 8-Pin HSOF Infineon IPT020N10N3ATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 300 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 3.7 mΩ
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSOF
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 375 W
- Typical Turn-On Delay Time : 34 ns
- CODE No.:906-4356
| Order No. | 63-5173-14 | |
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| Model No. | IPT020N10N3ATMA1 | |
| Standard price |
JPY: 2,190
USD: 13.73
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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