63-5170-60 ［Discontinued］SiHG70N60EF-GE3 N-Channel MOSFET, 70 A, 600 V EF Series, 3-Pin TO-247AC Vishay SiHG70N60EF-GE3
Features
- N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg)
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 70 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 38 mΩ
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 520 W
- Number of Elements per Chip : 1
- CODE No.:903-4475
| Order No. | 63-5170-60 | |
|---|---|---|
| Model No. | SiHG70N60EF-GE3 | |
| Standard price |
JPY: 2,270
USD: 14.23
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |