63-5167-30 Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247 IKW50N60H3FKSA1
Features
- Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
Spec
- Quantity：1bag(2pieces)
- Maximum Continuous Collector Current : 100 A
- Maximum Collector Emitter Voltage : 600 V
- Maximum Gate Emitter Voltage : ±20V
- Maximum Power Dissipation : 333 W
- Package Type : TO-247
- Mounting Type : Through Hole
- Channel Type : N
- Pin Count : 3
- Transistor Configuration : Single
- Length : 16.13mm
- Width : 5.21mm
- Height : 21.1mm
- Dimensions : 16.13 x 5.21 x 21.1mm
- Energy Rating : 2.55mJ
- CODE No.:897-7239
| Order No. | 63-5167-30 | |
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| Model No. | IKW50N60H3FKSA1 | |
| Standard price |
JPY: 2,090
USD: 13.10
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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