63-5160-30 ［Discontinued］IRF9389TRPBF Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9389TRPBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity：1bag(25pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 4.6 A, 6.8 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 40 mΩ, 103 mΩ
- Maximum Gate Threshold Voltage : 2.3V
- Minimum Gate Threshold Voltage : 1.3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Number of Elements per Chip : 2
- CODE No.:879-3312
| Order No. | 63-5160-30 | |
|---|---|---|
| Model No. | IRF9389TRPBF | |
| Standard price |
JPY: 780
USD: 4.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |