63-5153-62 ［Discontinued］IRFB3006GPBF N-Channel MOSFET, 270 A, 60 V HEXFET, 3-Pin TO-220AB Infineon IRFB3006GPBF
Features
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity：1set(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 270 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 2.5 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 375 W
- Number of Elements per Chip : 1
- CODE No.:865-5784
| Order No. | 63-5153-62 | |
|---|---|---|
| Model No. | IRFB3006GPBF | |
| Standard price |
JPY: 570
USD: 3.57
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2pieces) | |
|
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| Stock in Japan | - | |