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• 63-5139-79 IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF

Infineon

63-5139-79　IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF

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特徴

• N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

• Quantity：1bag(25pieces)
• Channel Type : N
• Maximum Continuous Drain Current : 17 A
• Maximum Drain Source Voltage : 55 V
• Maximum Drain Source Resistance : 110 mΩ
• Maximum Gate Threshold Voltage : 2V
• Minimum Gate Threshold Voltage : 1V
• Maximum Gate Source Voltage : -16 V, +16 V
• Package Type : DPAK (TO-252)
• Mounting Type : Surface Mount
• Pin Count : 3
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 45 W
• Maximum Operating Temperature : +175 °C
• CODE No.:830-3341
•  

Order No.Order No.ss="init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5139-79 IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF Infineon 63-5139-79　IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF 印刷 PDF 特徴 N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. 仕様 Quantity：1bag(25pieces) Channel Type : N Maximum Continuous Drain Current : 17 A Maximum Drain Source Voltage : 55 V Maximum Drain Source Resistance : 110 mΩ Maximum Gate Threshold Voltage : 2V Minimum Gate Threshold Voltage : 1V Maximum Gate Source Voltage : -16 V, +16 V Package Type : DPAK (TO-252) Mounting Type : Surface Mount Pin Count : 3 Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 45 W Maximum Operating Temperature : +175 °C CODE No.:830-3341   Order No. 63-5139-79 Model No. IRLR024NTRPBF Standard price JPY: 2,970 USD: 18.63 Excange rate 1USD= 159.42JPY Valid price in Japan Quantity 1bag(25pieces) Stock in Japan Supplier Stock Quote Other RequestsOther Requestsit"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5139-79 IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF Infineon 63-5139-79　IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon　IRLR024NTRPBF 印刷 PDF 特徴 N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. 仕様 Quantity：1bag(25pieces) Channel Type : N Maximum Continuous Drain Current : 17 A Maximum Drain Source Voltage : 55 V Maximum Drain Source Resistance : 110 mΩ Maximum Gate Threshold Voltage : 2V Minimum Gate Threshold Voltage : 1V Maximum Gate Source Voltage : -16 V, +16 V Package Type : DPAK (TO-252) Mounting Type : Surface Mount Pin Count : 3 Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 45 W Maximum Operating Temperature : +175 °C CODE No.:830-3341   アズワン品番 63-5139-79 型番 IRLR024NTRPBF 標準価格 JPY: 2,970 USD: 18.63 Excange rate 1USD= 159.42JPY Valid price in Japan 入り数 1bag(25pieces) 在庫数 サプライヤ在庫 お見積もり その他のお問い合わせ [$1]IRLR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon[/$1]