63-5130-31 SI4909DY-T1-GE3 Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity：1bag(20pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 6.5 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 34 mΩ
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3.2 W
- Width : 4mm
- CODE No.:818-1302
| Order No. | 63-5130-31 | |
|---|---|---|
| Model No. | SI4909DY-T1-GE3 | |
| Standard price |
JPY: 3,520
USD: 22.08
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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