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• 63-5126-53 SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay　SI4431CDY-T1-GE3

Vishay

63-5126-53　SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay　SI4431CDY-T1-GE3

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特徴

• P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

Spec

• Quantity：1bag(20pieces)
• Channel Type : P
• Maximum Continuous Drain Current : 7.2 A
• Maximum Drain Source Voltage : 30 V
• Maximum Drain Source Resistance : 49 mΩ
• Minimum Gate Threshold Voltage : 1V
• Maximum Gate Source Voltage : -20 V, +20 V
• Package Type : SOIC
• Mounting Type : Surface Mount
• Pin Count : 8
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 4.2 W
• Number of Elements per Chip : 1
• CODE No.:812-3215
•  

アズワン品番	63-5126-53
Model No.	SI4431CDY-T1-GE3
標準価格	JPY: 3,570 USD: 22.39 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(20pieces)
在庫数
Supplier StockSupplier Stock"init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5126-53 SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay　SI4431CDY-T1-GE3 Vishay 63-5126-53　SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay　SI4431CDY-T1-GE3 印刷 PDF 特徴 P-Channel MOSFET, 30V to 80V, Vishay Semiconductor 仕様 Quantity：1bag(20pieces) Channel Type : P Maximum Continuous Drain Current : 7.2 A Maximum Drain Source Voltage : 30 V Maximum Drain Source Resistance : 49 mΩ Minimum Gate Threshold Voltage : 1V Maximum Gate Source Voltage : -20 V, +20 V Package Type : SOIC Mounting Type : Surface Mount Pin Count : 8 Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 4.2 W Number of Elements per Chip : 1 CODE No.:812-3215   アズワン品番 63-5126-53 型番 SI4431CDY-T1-GE3 標準価格 JPY: 3,570 USD: 22.39 Excange rate 1USD= 159.42JPY Valid price in Japan 入り数 1bag(20pieces) 在庫数 サプライヤ在庫 Quote その他のお問い合わせ [$1]SI4431CDY-T1-GE3 P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay[/$1]