63-5126-52 Si2338DS-T1-GE3 N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity：1bag(20pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 6 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 33 mΩ
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Maximum Operating Temperature : +150 °C
- CODE No.:812-3126
| Order No. | 63-5126-52 | |
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| Model No. | Si2338DS-T1-GE3 | |
| Standard price |
JPY: 1,990
USD: 12.47
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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