63-5123-05 FDD7N25LZTM N-Channel MOSFET, 6.2 A, 250 V UniFET, 3-Pin DPAK ON Semiconductor FDD7N25LZTM
Features
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity：1set(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 6.2 A
- Maximum Drain Source Voltage : 250 V
- Maximum Drain Source Resistance : 570 mΩ
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Maximum Power Dissipation : 56 W
- Number of Elements per Chip : 1
- CODE No.:809-0931
| Order No. | 63-5123-05 | |
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| Model No. | FDD7N25LZTM | |
| Standard price |
JPY: 1,490
USD: 9.27
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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