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ON Semiconductor

63-5122-08　FQPF27P06 P-Channel MOSFET, 19 A, 60 V QFET, 3-Pin TO-220 ON Semiconductor　FQPF27P06

Features

  • QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(10pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 19 A
  • Maximum Drain Source Voltage : 60 V
  • Maximum Drain Source Resistance : 70 mΩ
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 120 W
  • Typical Input Capacitance @ Vds : 1100 pF @ -25 V
  • CODE No.:807-5901
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Order No. 63-5122-08
Model No. FQPF27P06
Standard price JPY: 2,600 USD: 16.30
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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