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IXYS

63-5116-34　［Discontinued］IXFQ50N50P3 N-Channel MOSFET, 50 A, 500 V HiperFET, Polar3, 3-Pin TO-3P IXYS　IXFQ50N50P3

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Spec

  • Quantity：1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 50 A
  • Maximum Drain Source Voltage : 500 V
  • Maximum Drain Source Resistance : 125 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-3P
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 960 W
  • Number of Elements per Chip : 1
  • CODE No.:802-4464
  •  
Order No. 63-5116-34
Model No. IXFQ50N50P3
Standard price JPY: 1,010 USD: 6.28
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -

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