63-5116-32 IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB210N30P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 210 A
- Maximum Drain Source Voltage : 300 V
- Maximum Drain Source Resistance : 14.5 mΩ
- Maximum Gate Threshold Voltage : 5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PLUS264
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.89 kW
- Number of Elements per Chip : 1
- CODE No.:802-4357
| Order No. | 63-5116-32 | |
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| Model No. | IXFB210N30P3 | |
| Standard price |
JPY: 6,550
USD: 40.75
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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