63-5110-52 ［Discontinued］ON Semiconductor NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247 NGTB50N120FL2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity：1piece
- Maximum Continuous Collector Current : 100 A
- Maximum Collector Emitter Voltage : 1200 V
- Maximum Gate Emitter Voltage : ±20V
- Maximum Power Dissipation : 535 W
- Package Type : TO-247
- Mounting Type : Through Hole
- Channel Type : N
- Pin Count : 3
- Switching Speed : 1MHz
- Transistor Configuration : Single
- Length : 16.25mm
- Width : 5.3mm
- Height : 21.4mm
- Dimensions : 16.25 x 5.3 x 21.4mm
- Minimum Operating Temperature : -55 °C
- CODE No.:796-1369
| Order No. | 63-5110-52 | |
|---|---|---|
| Model No. | NGTB50N120FL2WG | |
| Standard price |
JPY: 1,680
USD: 10.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |