ON Semiconductor

63-5105-95 ON Semi MJD112-1G NPN Darlington Pair, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251) MJD112-1G

Features

  • Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor

Spec

  • Quantity:1bag(15pieces)
  • Transistor Type : NPN
  • Maximum Continuous Collector Current : 2 A
  • Maximum Collector Emitter Voltage : 100 V
  • Maximum Emitter Base Voltage : 5 V
  • Package Type : IPAK (TO-251)
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Transistor Configuration : Single
  • Number of Elements per Chip : 1
  • Minimum DC Current Gain : 1000
  • Maximum Base Emitter Saturation Voltage : 4 V
  • Maximum Collector Base Voltage : 100 V
  • Maximum Collector Emitter Saturation Voltage : 3 V
  • Maximum Collector Cut-off Current : 20µA
  • Width : 2.38mm
  • CODE No.:790-5315
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Order No. 63-5105-95
Model No. MJD112-1G
Standard price JPY: 3,160 USD: 19.81
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(15pieces)
Stock in Japan
Supplier Stock