63-5102-36 SI2333DDS-T1-GE3 P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity：1bag(10pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 6 A
- Maximum Drain Source Voltage : 12 V
- Maximum Drain Source Resistance : 19 Ω
- Minimum Gate Threshold Voltage : 0.4V
- Maximum Gate Source Voltage : -8 V, +8 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Maximum Power Dissipation : 1.7 W
- Number of Elements per Chip : 1
- CODE No.:787-9222
| Order No. | 63-5102-36 | |
|---|---|---|
| Model No. | SI2333DDS-T1-GE3 | |
| Standard price |
JPY: 890
USD: 5.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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