63-5102-35 ［Discontinued］SiHG32N50D-GE3 N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3
Features
- N-Channel MOSFET, 500V, Vishay Semiconductor
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 30 A
- Maximum Drain Source Voltage : 500 V
- Maximum Drain Source Resistance : 150 mΩ
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 390 W
- Number of Elements per Chip : 1
- CODE No.:787-9207
| Order No. | 63-5102-35 | |
|---|---|---|
| Model No. | SiHG32N50D-GE3 | |
| Standard price |
JPY: 2,000
USD: 12.44
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |