63-5102-31 SI2319CDS-T1-GE3 P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 Vishay SI2319CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity：1bag(10pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 4.4 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 108 mΩ
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Maximum Power Dissipation : 2.5 W
- Maximum Operating Temperature : +150 °C
- CODE No.:787-9042
| Order No. | 63-5102-31 | |
|---|---|---|
| Model No. | SI2319CDS-T1-GE3 | |
| Standard price |
JPY: 1,120
USD: 7.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|