63-5102-30 [Discontinued]SI2318CDS-T1-GE3 N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 5.6 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 51 mΩ
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Maximum Power Dissipation : 2.1 W
- Number of Elements per Chip : 1
- CODE No.:787-9036
| Order No. | 63-5102-30 | |
|---|---|---|
| Model No. | SI2318CDS-T1-GE3 | |
| Standard price |
JPY: 1,530
USD: 9.52
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI2318CDS-T1-GE3 N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3](https://aimg.as-1.co.jp/c/63/5102/30/63510230.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)