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Infineon

63-5097-02　［Discontinued］IRF8010PBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF8010PBF

Features

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

SpecSpec class="init"> ［Discontinued］IRF8010PBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF8010PBF 63-5097-02 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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Infineon

63-5097-02　［Discontinued］IRF8010PBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF8010PBF

特徴

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 80 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 15 mΩ
  • Maximum Gate Threshold Voltage : 2V
  • Minimum Gate Threshold Voltage : 0.6V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 260 W
  • Number of Elements per Chip : 1
  • CODE No.:784-0290
  •  
Order No.Order No.ss="init"> ［Discontinued］IRF8010PBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF8010PBF 63-5097-02 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
Infineon

63-5097-02　［Discontinued］IRF8010PBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF8010PBF

特徴

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 80 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 15 mΩ
  • Maximum Gate Threshold Voltage : 2V
  • Minimum Gate Threshold Voltage : 0.6V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 260 W
  • Number of Elements per Chip : 1
  • CODE No.:784-0290
  •  
アズワン品番 63-5097-02
Model No. IRF8010PBF
標準価格 JPY: 1,180 USD: 7.40
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
在庫数 -

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