63-5089-03 ［Discontinued］ON Semiconductor NGTB15N60EG IGBT, 30 A 600 V, 3-Pin TO-220 NGTB15N60EG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity：1bag(2pieces)
- Maximum Continuous Collector Current : 30 A
- Maximum Collector Emitter Voltage : 600 V
- Maximum Gate Emitter Voltage : ±20V
- Maximum Power Dissipation : 117 W
- Package Type : TO-220
- Mounting Type : Through Hole
- Channel Type : N
- Pin Count : 3
- Transistor Configuration : Single
- Length : 10.28mm
- Width : 4.82mm
- Height : 15.75mm
- Dimensions : 10.28 x 4.82 x 15.75mm
- Minimum Operating Temperature : -55 °C
- CODE No.:773-7361
| Order No. | 63-5089-03 | |
|---|---|---|
| Model No. | NGTB15N60EG | |
| Standard price |
JPY: 410
USD: 2.55
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |