63-5083-37 SiHG47N60E-GE3 N-Channel MOSFET, 47 A, 600 V E Series, 3-Pin TO-247AC Vishay SiHG47N60E-GE3
Features
- N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 47 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 64 mΩ
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 357 W
- Minimum Operating Temperature : -55 °C
- CODE No.:768-9332
| Order No. | 63-5083-37 | |
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| Model No. | SiHG47N60E-GE3 | |
| Standard price |
JPY: 2,220
USD: 13.92
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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