63-5071-05 FDC6327C Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC6327C
Features
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity：1bag(10pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 1.9 A, 2.7 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 130 mΩ, 270 mΩ
- Minimum Gate Threshold Voltage : 0.4V
- Maximum Gate Source Voltage : -8 V, +8 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 960 mW
- Maximum Operating Temperature : +150 °C
- CODE No.:761-3956
| Order No. | 63-5071-05 | |
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| Model No. | FDC6327C | |
| Standard price |
JPY: 1,620
USD: 10.16
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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