63-5070-63 [Discontinued]STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics STD1NK60-1
Features
- N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 8.5 Ω
- Maximum Gate Threshold Voltage : 3.7V
- Minimum Gate Threshold Voltage : 2.25V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : IPAK (TO-251)
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 30 W
- Typical Turn-Off Delay Time : 19 ns
- CODE No.:761-2704
| Order No. | 63-5070-63 | |
|---|---|---|
| Model No. | STD1NK60-1 | |
| Standard price |
JPY: 450
USD: 2.80
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics STD1NK60-1](https://aimg.as-1.co.jp/c/63/5070/63/63493713.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)