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63-5069-56　FDL100N50F N-Channel MOSFET, 100 A, 500 V UniFET, 3-Pin TO-264 ON Semiconductor　FDL100N50F

FeaturesFeatures class="init"> 63-5069-56 FDL100N50F N-Channel MOSFET, 100 A, 500 V UniFET, 3-Pin TO-264 ON Semiconductor　FDL100N50F 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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63-5069-56　FDL100N50F N-Channel MOSFET, 100 A, 500 V UniFET, 3-Pin TO-264 ON Semiconductor　FDL100N50F

特徴

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity：1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 100 A
  • Maximum Drain Source Voltage : 500 V
  • Maximum Drain Source Resistance : 55 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-264
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.5 kW
  • Number of Elements per Chip : 1
  • CODE No.:759-9128
  •  
Order No.Order No.ss="init"> 63-5069-56 FDL100N50F N-Channel MOSFET, 100 A, 500 V UniFET, 3-Pin TO-264 ON Semiconductor　FDL100N50F 【AXEL GLOBAL】ASONE

AS ONE AS ONE

Listed products : 3 milion products
How to use
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Contact us
ON Semiconductor

63-5069-56　FDL100N50F N-Channel MOSFET, 100 A, 500 V UniFET, 3-Pin TO-264 ON Semiconductor　FDL100N50F

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity：1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 100 A
  • Maximum Drain Source Voltage : 500 V
  • Maximum Drain Source Resistance : 55 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-264
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.5 kW
  • Number of Elements per Chip : 1
  • CODE No.:759-9128
  •  
Order No. 63-5069-56
Model No. FDL100N50F
Standard price JPY: 3,880 USD: 24.34
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock

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