63-5069-52 FDB28N30TM N-Channel MOSFET, 28 A, 300 V UniFET, 3-Pin D2PAK ON Semiconductor FDB28N30TM
Features
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity：1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 28 A
- Maximum Drain Source Voltage : 300 V
- Maximum Drain Source Resistance : 129 mΩ
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 250 W
- Dimensions : 10.67 x 11.33 x 4.83mm
- CODE No.:759-8970
| Order No. | 63-5069-52 | |
|---|---|---|
| Model No. | FDB28N30TM | |
| Standard price |
JPY: 880
USD: 5.48
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|