63-5059-36 IPP200N25N3GXKSA1 N-Channel MOSFET, 64 A, 250 V OptiMOS 3, 3-Pin TO-220 Infineon IPP200N25N3GXKSA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 64 A
- Maximum Drain Source Voltage : 250 V
- Maximum Drain Source Resistance : 20 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Maximum Power Dissipation : 300 W
- Number of Elements per Chip : 1
- CODE No.:754-5500
| Order No. | 63-5059-36 | |
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| Model No. | IPP200N25N3GXKSA1 | |
| Standard price |
JPY: 1,050
USD: 6.58
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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