63-5059-34 ［Discontinued］IPD110N12N3GATMA1 N-Channel MOSFET, 75 A, 120 V OptiMOS 3, 3-Pin DPAK Infineon IPD110N12N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 75 A
- Maximum Drain Source Voltage : 120 V
- Maximum Drain Source Resistance : 11 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Maximum Power Dissipation : 136 W
- Dimensions : 6.73 x 6.22 x 2.41mm
- CODE No.:754-5462
| Order No. | 63-5059-34 | |
|---|---|---|
| Model No. | IPD110N12N3GATMA1 | |
| Standard price |
JPY: 460
USD: 2.88
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |