63-5059-30 IPB036N12N3GATMA1 N-Channel MOSFET, 180 A, 120 V OptiMOS 3, 7-Pin D2PAK Infineon IPB036N12N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 120 V
- Maximum Drain Source Resistance : 3.6 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Maximum Power Dissipation : 300 W
- Number of Elements per Chip : 1
- CODE No.:754-5428
| Order No. | 63-5059-30 | |
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| Model No. | IPB036N12N3GATMA1 | |
| Standard price |
JPY: 1,250
USD: 7.84
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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