63-5059-29 ［Discontinued］IPB025N10N3GATMA1 N-Channel MOSFET, 180 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon IPB025N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 4.4 mΩ
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Typical Turn-Off Delay Time : 84 ns
- CODE No.:754-5421
| Order No. | 63-5059-29 | |
|---|---|---|
| Model No. | IPB025N10N3GATMA1 | |
| Standard price |
JPY: 1,370
USD: 8.59
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
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| Stock in Japan | - | |